Ceramics Substrates with Excellent Heat Dissipation 

Ceramics Substrates with Excellent Heat Dissipation

Ebinax’s plating technology maximizes the performance of semiconductor devices

Special Features

High electrical insulation

High thermal conductivity

Excellent heat dissipation

Low coefficient of thermal expansion

Comparison of Substrate Materials

  Ceramics Glass Silicon Organic
Al2O3 AlN Alkali-free Quartz Sillicon (FR-4) (PTFE)
Thermal Conductivity
W/m・k
30 150-250 1.0 1.3 168 <0.5 0.23
Coefficient of thermal
×10-6/K
7 4-5 3-4 0.5 3.9 20 10
Permittivity
εr
<10 9 5-7 4 12 4.5 2.1
Loss tangent
tanδ
<0.0005 0.0005 0.002 <0.0005 0.005 0.0002
Chemical resistance              
Features Heat dissipation Excellent high frequency properties Excellent workability Low cost Excellent high frequency properties

Good    Average    poor

Reference values

Reference values

Plating and Patterning Processes

Subtractive Process

Excellent surface mount ability due to flat surface of circuit

  • Material
  • Seed layer formation
  • Electroplating
  • Resist formation
  • Etching
  • Resist removal
  • Material
  • Seed layer formation
  • Electroplating
  • Resist formation
  • Etching
  • Resist removal

Semi-Additive Process

Effective for narrow pitch copper pattern

  • Material
  • Seed layer formation
  • Resist formation
  • Electroplating
  • Resist removal
  • Seed layer removal
  • Material
  • Seed layer formation
  • Resist formation
  • Electroplatin
  • Resist removal
  • Seed layer removal

Comparison of Patterning Processes

  Subtractive Process Semi-additive Process
Shape
Ease of surface mounting    
Line/Space ※ 10/35μm 10µm/25µm or more
Line/Space   ※ Conductor uniformity in through holes    
Conductivity    
Plating thickness 50µm or more  

superior    inferior

※ The value of L/S is based on an example thickness of 10μm.

※ The value of L/S is based on an example thickness of 10μm.

Design Specs

Standard Design

Corresponding size 4 × 4 ※Recommended
Thickness (A) µm 200-600
Copper thickness (B) µm 10 20 50
Line width (C) 10 10 10
Space(D)
μm(Subtractive)
35 70 150
Space (E)
μm(Semi-Additive)
25 50
断面図(サブトラクティブ)

Cross-section(Subtractive)

断面図(セミアディティブ)

Cross-section(Semi-Additive)

Through-hole Filling

【Actual value】

Via’s top diameter (F) 100µm /
Ceramic thickness (G) 300µm

貫通穴横断面図

Through-hole via cross-section

These dimensions are for example only. Please contact us with your exact specifications.

Plating Examples

Ceramic Circuit Chip with Selective Plating

Fine pitch wire plating (Peltier device)

Subtractive process

Semi-Additive process

Through-hole Filling

Substrate Materials and Application Examples

Types of ceramics  Application
Al2O3 Heat dissipating board, Peltier module
ZrO2 Peltier module
ZnO Semiconductor circuit board,Light emitting diode
BaTiO3 GPS Patch Antenna, Positive Temperature Coefficient thermistor
PZT Ink jet printer head 
AlN Board for LED, Peltier module, Heat dissipating board
SiC Board for Laser diode
Si3N4 Invertor, Convertor, Battery , Secondary battery

Production Flow Chart

Ebinax has an integrated production system from material procurement to dicing substrate.

  • Discussing / Order
  • Material procurement
  • Plating(Electrode formation)
  • Polishing/Dicing
  • Delivery
納品までの流れ

※Please contact us with your request.

Our process leads to lower management costs and shorter lead times.

Please contact us if you have any questions.

[TEL] +81-3-3742-0107  [FAX] +81-3-3745-5476